MSN06B2K Description
MSN06B2K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN06B2K Key Features
- VDS = 60V,ID =115A RDS(ON) < 7.5mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply