MSN06B2K - N-Channel MOSFET

Features

VDS = 60V,ID =115A RDS(ON) < 7.5mΩ @ VGS=10V (Typ6.5mΩ).
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

MSN06B2K n-channel mosfet by MORESEMI - Datasheet Preview

Datasheet Details

Part number	MSN06B2K
Manufacturer	MORESEMI
File Size	433.49 KB
Description	N-Channel MOSFET
Datasheet	MSN06B2K Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MSN06B2K 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID =115A RDS(ON) < 7.5mΩ @ VGS=10V (Typ6.

Published: Oct 29, 2016 |