MSN08B1K
Key Features
- VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
Applications
- Power switching application
