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MSN10B0K - N-Channel MOSFET

Features

  • VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.9mΩ).
  • Special process technology for high ESD capability.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.

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Datasheet preview – MSN10B0K

Datasheet Details

Part number MSN10B0K
Manufacturer MORESEMI
File Size 556.05 KB
Description N-Channel MOSFET
Datasheet download datasheet MSN10B0K Datasheet
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Full PDF Text Transcription

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MSN10B0K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V (Typ:9.
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