MSN10B0K Description
MSN10B0K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN10B0K Key Features
- VDS = 100V,ID =100A RDS(ON) < 13mΩ @ VGS=10V
- Special process technology for high ESD capability
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply