MSN10B1K Description
MSN10B1K 100V(D-S) N-Channel Enhancement Mode Power MOS FET General.
MSN10B1K Key Features
- VDS =100V,ID =110A RDS(ON) <9mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply