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MSN10B1K
100V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =100V,ID =110A RDS(ON) <9mΩ @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220-3L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
MSN10B1K
MSN10B1K
TO-220-3L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
MSN10B1K Datasheet
