MT6010
Description
These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Key Features
- 15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
- Low gate charge ( typical 11.5 nC)
- Low Crss ( typical 25 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
