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MT6010 Datasheet N-channel Power MOSFET

Manufacturer: MOS-TECH

Overview: MOS-TECH Semiconductor Co.,LTD MT6010 60V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

  • 15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V.
  • Low gate charge ( typical 11.5 nC).
  • Low Crss ( typical 25 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter.

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