MT6010 Key Features
- 15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V
- Low gate charge ( typical 11.5 nC)
- Low Crss ( typical 25 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Part: MT6010
- Manufacturer: MOS-TECH
- Size: 578.59 KB
Related MOS-TECH Datasheets
| Part Number | Description |
|---|---|
| MT6011 | P-Channel Power MOSFET |
| MT6401 | P-Channel Power MOSFET |
| MT6405 | P-Channel Power MOSFET |
| MT6680 | N-Channel Power MOSFET |
| MT6968 | N-Channel Power MOSFET |
MT6010 Description
These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC...