Datasheet Details
| Part number | MT6010 |
|---|---|
| Manufacturer | MOS-TECH |
| File Size | 578.59 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 MT6010 Datasheet
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General Description
These N-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Key Features
- 15A, 60V, RDS(on) = 0.04Ω @VGS = 10 V.
- Low gate charge ( typical 11.5 nC).
- Low Crss ( typical 25 pF).
- Fast switching.
- 100% avalanche tested.
- Improved dv/dt capability.
- 175°C maximum junction temperature rating GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter.