MT6011
Description
These P-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology.
Key Features
- 10A, -60V, RDS(on) = 0.07Ω @VGS = -10 V
- Low gate charge ( typical 21 nC)
- Low Crss ( typical 80 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
