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MT6401 - P-Channel Power MOSFET

Download the MT6401 datasheet PDF. This datasheet also covers the MT6401-MOS variant, as both devices belong to the same p-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Super high dense cell design for low RDS(ON).
  • Rugged and reliable.
  • Simple drive requirement.
  • SOT-23 package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT6401-MOS-TECH.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT6401
Manufacturer MOS-TECH
File Size 713.09 KB
Description P-Channel Power MOSFET
Datasheet download datasheet MT6401 Datasheet

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Other Datasheets by MOS-TECH

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT6401 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -28V - 5.6A 45@ VGS=-10V 55 @ VGS=-4.5V NOTE：The MT6401 is available in a lead-free package D S G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Sym Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ bol VDS VGS ID Limit -28 ±20 -5.6 - Pulse d b IDM -25 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.5 1.