Description
This P-Channel Logic Level MOSFET is produced using Mos-tech's advanced PowerTrench process.
Battery management
Load switch
Battery protection
DC/DC conversion
Features
- Max rDS(on) = mΩ @ VGS = -10 V, ID = -A.
- Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A.
- Low Gate Charge.
- High performance trench technology for extremely low
rDS(on).
- RoHS Compliant
S D D
16
PIN 1
G DD TSOP-6
2 3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Drain-Source Voltage
Parameter
Gate-Source Voltage
Drain Current - Continuous
- Pulsed Maximum Power dissipation
Operating and Storage.