MPQ1918 Overview
Description
The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application. The MPQ1918 features independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs.
Key Features
- Independent High-Side (HS) and Low-Side (LS) TTL Logic Inputs
- HS Floating Biased Voltage Rail Operates Up to 100VDC
- Separate Gate Outputs for Adjustable TurnOn and Turn-Off Capabilities
- Internal Bootstrap Switch Supply Voltage Clamping
- 3.7V to 5.5V VCC Voltage (VCC) Range
- 0.27Ω / 1.2Ω Pull-Down/Pull-Up Resistance
- Fast Propagation Times
- Excellent Propagation Delay Matching (Typically 1.5ns)
- Available in an FCQFN-14 (3mmx3mm) Package with Wettable Flanks
- Available in AEC-Q100 Grade 1
