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MPQ1918GQE-AEC1 - Half-Bridge GaN/MOSFET Driver

Download the MPQ1918GQE-AEC1 datasheet PDF. This datasheet also covers the MPQ1918 variant, as both devices belong to the same half-bridge gan/mosfet driver family and are provided as variant models within a single manufacturer datasheet.

General Description

The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application.

Key Features

  • independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate voltage from exceeding the GaN FET’s maximum gate-to-source voltage rating. The MPQ1918 has two separate gate outputs, allowing the turn-on and turn-off capabilities to be independently adjusted by addin.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MPQ1918-MPS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Monolithic Power Systems

Part Number Description
MPQ1918 Half-Bridge GaN/MOSFET Driver
MPQ1923-AEC1 Half-Bridge Gate Driver
MPQ1925 Half-Bridge Gate Driver
MPQ18811 Single-Channel Gate Driver
MPQ18913 0.3A High Frequency Transformer Driver

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MPQ1918 100V, High-Frequency, Half-Bridge GaN/MOSFET Driver, AEC-Q100 Qualified DESCRIPTION The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application. The MPQ1918 features independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate voltage from exceeding the GaN FET’s maximum gate-to-source voltage rating.