Description
The MPQ1918 is designed to drive enhancement mode Gallium Nitride (GaN) FETs or N-channel MOSFETs with a low gate threshold voltage in a half-bridge or synchronous application.
Features
- independent high-side (HS) and low-side (LS) pulse-width modulation (PWM) inputs. It also provides a bootstrap technique for the HS driver voltage, and can operate up to 100V. The new charging technology prevents the HS driver voltage from exceeding the VCC voltage (VCC), which prevents the gate voltage from exceeding the GaN FET’s maximum gate-to-source voltage rating. The MPQ1918 has two separate gate outputs, allowing the turn-on and turn-off capabilities to be independently adjusted by addin.
MPQ1918GQE-AEC1 Datasheet
