Datasheet Summary
Semiconductor piance
12 3
TO-252-2L
TRANSISTOR (NPN) Features
Power Dissipation
1. BASE 2. COLLECTOR 3 .EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC
TJ,Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Operation Junction and Storage Temperature Range
Value
Unit
-55-150
℃
ELECTRICAL CHARACTERISTICS ( Ta=25℃ unless otherwise specified )
Parameter
Symbol
Test conditions
Min
Collector-base breakdown voltage
V(BR)CBO
IC = 100μA, IE=0
Collector-emitter breakdown voltage V(BR)CEO
IC = 10mA,...
