Datasheet Details
| Part number | 2SD882 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD882 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 210.01 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882-INCHANGE.pdf |
|
|
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·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Complement to Type 2SB772 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.0 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD882 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
IB= 0.2A VBE(sat) Base-Emitter Saturation Voltage IC= 2.0A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD882 | NPN Silicon Power Transistor | NEC |
 |
2SD882 | NPN MEDIUM POWER TRANSISTOR | ST Microelectronics |
 |
2SD882 | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC |
 |
2SD882 | NPN EPITAXIAL SILICON TRANSISTOR | JILIN SINO |
| MSKSEMI | 2SD882 | NPN TRANSISTOR | MSKSEMI |
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