Inchange Semiconductor 2SD882
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | 2SD882 |
|---|---|
| Datasheet | 2SD882 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Collector Current-IC= 3.0A●Low Saturation Voltage - : VCE(sat)= 0.5V(Max)@ IC= 2.0A, IB= 0.2A
●Good Linearity of hFE
●Complement to Type 2SB772
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Suited for the output stage of 3 watts audio amplifier, voltage regulator, DC-DC converter and relay driver.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3.0 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 7.0 A 1.0 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD882 isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB=...