2SD882 Datasheet | Kexin Semiconductor

Features Excellent h FE linearity and high h FE h FE = 60 to 400 (VCE = 2 V, IC = 1 A) 1.70 0.1 0.42 0.1 0.46 0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current to Continuous Collector Dissipation Junction Temperature Storage Temperature Symbol Rating Unit VCBO VCEO VEBO Pc Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol VCBO VCEO VEBO ICBO ICEO IEBO h FE VCE(sat) VBE(sat) f T Testconditions Ic=100u A ,IE=0 IC= 10 m A , IB=0 IE= 100 u A ,IC=0 VCB=40 V , IE=0 VCE=30 V , IB=0 VEB=6V , IC=0 VCE= 2V, IC= 1A VCE=2V, IC= 100m A IC=2A, IB= 0.2A IC=2A, IB= 0.2A VCE=5 V, IC=0.1m A,f = 10MHz Ƶ Classification of hfe(1) Type 2SD882-R Range Marking 60-120 2SD882-Q 2SD882-P 100-200 160-320 ' 2SD882-E...