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ST 2SD882H
NPN Silicon Power Transistor
The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain.
E C B
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 C) Parameter
O
Symbol VCBO VCEO VEBO IC ICP Ptot Ptot Tj TS
Value 60 30 5 3 7 1 10 150 - 55 to + 150
Unit V V V A A W W
O
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (pulse) Total Power Dissipation(Ta = 25 OC) Total Power Dissipation(TC = 25 OC) Junction Temperature Storage Temperature Range
C C
O
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 2 V, IC = 1 A Current Gain Group
Symbol hFE hFE hFE hFE hFE ICBO IEBO VCEsat VBEsat fT Cob
Min. 60 100 160 200 30 -
Typ. 90 45
Max.
2SD882H Datasheet
