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ST 2SD882U-P
NPN SILICON EPITAXIAL POWER TRANSISTOR
These devices are intended for use in medium power linear and switching applications
TO-126 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Base Current Power Dissipation at TA = 25 OC Power Dissipation at TC = 25 OC Operating and Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICM IB PD PD TS
Value 120 100 100 6 4 7 1 1.