2SD882U-P Datasheet

The 2SD882U-P is a NPN Silicon Transistor.

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Part Number2SD882U-P
ManufacturerSEMTECH
Overview ST 2SD882U-P NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in medium power linear and switching applications TO-126 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) . er On Voltage at VCE = 1 V, IC = 2 A Transition Frequency at VCE = 1 V, IC = 250 mA Symbol hFE hFE hFE hFE ICBO ICES IEBO V(BR)CEO VCE(sat) VBE(on) fT Min. 100 15 100 15 100 3 Max. 260 260 100 100 1 0.8 1.5 - Unit µA µA mA V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech Internationa.
Part Number2SD882U-P
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable op. PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A ; VCE= 1V ICBO Collector Cutoff Current VCB= 120V; IE= 0 ICES Collector Cutoff Current VCE= 100V; IE= 0.