Datasheet Details
| Part number | 2SD882U-P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882U-P-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD882U-P |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 206.28 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882U-P-INCHANGE.pdf |
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·High Collector Current-IC= 3.0A ·Low Saturation Voltage - : VCE(sat)= 0.8V(Max)@ IC= 2.0A, IB= 0.2A ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design for used in medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCES Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse 7.0 A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 1.25 W 36 TJ Junction Temperature 150 ℃ Tstg Operating and Storage Temperature Range -65~150 ℃ 2SD882U-P isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ;Ib=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.0A;
IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD882U-P | NPN Silicon Transistor | SEMTECH |
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2SD882 | NPN Silicon Power Transistor | NEC |
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2SD882 | NPN MEDIUM POWER TRANSISTOR | ST Microelectronics |
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2SD882 | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC |
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2SD882 | NPN EPITAXIAL SILICON TRANSISTOR | JILIN SINO |
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| 2SD818 | Silicon NPN Power Transistor |