Part 2SD884
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 204.33 KB
Inchange Semiconductor
2SD884

Overview

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.5A High speed switching Minimum Lot-to-Lot variations for robust device performance and reliable operation.