Datasheet Details
| Part number | 2SD884 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD884-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | 2SD884 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.33 KB |
| Description | NPN Transistor |
| Datasheet | 2SD884-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.5A ·High speed switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD884 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
IB=0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SD884 | SILICON POWER TRANSISTOR | SavantIC |
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