2SD884 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage- : 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;.