| Part Number | 2SD884 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 200V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 0.5A ·High speed switching ·Minimum Lot-to-Lot variations for robust d. e IC= 5A; IB=0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=0.5A ICBO Collector Cutoff Current VCB= 330V ; IE= 0 IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 hFE DC Current Gain tf Fall Time IC= 5A ; VCE= 4V IC= 5A , IB1= IB2= 800mA RB=0.5Ω,-VEB=5V 2SD884 MIN TYP. MAX UNIT 1. |
2SD884 Datasheet
The 2SD884 is a NPN Transistor.
| Part Number | 2SD884 |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·High voltage;high speed ·Large PC APPLICATIONS ·For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION AB. IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCE=330V; VEB=0 ICES Collector cut-off current VCE=300V; VEB=0,Ta=100 IEBO hFE tf Emitter cut-off current DC current gain Fall time VEB=6.0V; IC=0 IC=5A ; VCE=4V IC=5A ;-VEB=5V IB1 =0.8A;RB=0.5> 10 MIN 200 TYP. www.datasheet4u.com 2SD884 SYMBOL VCEO(SUS) VCE(sat) VBE(. |