Datasheet Summary
isc Silicon NPN Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
- Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.0V(Max) @IC= 3.0A
- plement to Type 2SB834
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use in audio frequency power amplifier...
