Datasheet Details
| Part number | 2SD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD880-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor 2SD880.
| Part number | 2SD880 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 218.41 KB |
| Description | NPN Transistor |
| Datasheet | 2SD880-INCHANGE.pdf |
|
|
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 3.0A ·plement to Type 2SB834 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak 6.0 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 4.16 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD880 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD880 | NPN Epitaxial Silicon Transistor | GME |
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2SD880 | NPN Transistor | UTC |
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2SD880 | SILICON POWER TRANSISTOR | SavantIC |
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2SD880 | NPN Silicon Epitaxial Power Transistor | Weitron |
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2SD880 | Transistor | TGS |
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