Weitron 2SD880
NPN Silicon Epitaxial Power Transistor
FEATURES
: * Low frequency power amplifier * Complement to 2SB834 3 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER TO-220MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 60 7 3 1.5 150 -55-150 Units V V V A W ℃ ℃ELECTRICAL CHARACTERISTICS
(Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition Frequency Collector output capacitance Turn on time Storage time Fall time Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE (sat) VBE fT Cob ton ts tf IB1=-IB2=0.2A, IC=2A VCC=30V, PW=20µs Test conditions MIN 60 60 7 100 100 60 300 1 1 3 70 0.8 1.5 0.8 V V...