Datasheet Details
| Part number | 2SD882D |
|---|---|
| Manufacturer | Dc Components |
| File Size | 242.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882D_DcComponents.pdf |
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Overview: DC COMPONENTS CO., LTD. R 2SD882D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR.
| Part number | 2SD882D |
|---|---|
| Manufacturer | Dc Components |
| File Size | 242.74 KB |
| Description | NPN Transistor |
| Datasheet | 2SD882D_DcComponents.pdf |
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Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning 1 = Emitter 2 = Collector 3 = Base .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) TO-126ML .146(3.70) .136(3.44) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) www.DataSheet4U.com .148(3.75) .138(3.50) Symbol VCBO VCEO VEBO IC IC IB o Rating 40 30 5 3 7 0.6 10 1 +150 -55 to +150 Unit V V V A A A W W o o .123(3.12) .113(2.87) .300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .090 Typ (2.28) .084(2.14) .074(1.88) Collector Current(Pulse) Base Current(DC) .591(15.0) .551(14.0) Total Power Dissipation(TC=25 C) Total Power Dissipation(TA=25 C) Junction Temperature Storage Temperature o PD PD TJ TSTG .027(0.69) .017(0.43) C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2% Min 40 30 5 30 100 - Typ 0.3 1 150 200 90 45 Max 1 1 0.5 2 500 - Unit V V V µA µA V V MHz pF Test Conditions IC=100µA IC=1mA IE=10µA VCB=30V VEB=3V IC=2A, IB=0.2A IC=2A, IB=0.2A IC=20mA, VCE=2V IC=1A, VCE=2V IC=0.1A, VCE=5V IE=0, VCB=10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 100~200 P 160~320 E 250~500
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SD882 | NPN Silicon Power Transistor | NEC |
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2SD882 | NPN Transistor | INCHANGE |
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2SD882 | NPN MEDIUM POWER TRANSISTOR | ST Microelectronics |
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2SD882 | MEDIUM POWER LOW VOLTAGE TRANSISTOR | UTC |
 |
2SD882 | NPN EPITAXIAL SILICON TRANSISTOR | JILIN SINO |
| Part Number | Description |
|---|---|
| 2SD882 | NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD882S | NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD879 | NPN EPITAXIAL PLANAR TRANSISTOR |
| 2SD313 | NPN Transistor |
| 2SD667A | NPN Transistor |
| 2SD965 | NPN Transistor |