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DC COMPONENTS CO., LTD.
R
2SD882D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter 2 = Collector 3 = Base
.163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27)
TO-126ML
.146(3.70) .136(3.44)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC)
www.DataSheet4U.com
.148(3.75) .138(3.50)
Symbol VCBO VCEO VEBO IC IC IB
o
Rating 40 30 5 3 7 0.6 10 1 +150 -55 to +150
Unit V V V A A A W W
o o
.123(3.12) .113(2.87)
.300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .