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DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2SD882S
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 0.75W audio amplifier, voltage regulator, DC-DC converter and relay driver.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC PD TJ TSTG
Rating Unit
40
V
30
V
5
V
3
A
750
mW
+150
oC
-55 to +150 oC
.190(4.83) .170(4.33)
.190(4.83) .170(4.33)
.500 (12.70) Min
2o Typ 2o Typ
(1.0.2570)Typ
.022(0.56) .014(0.36)
.100 (2.54)
Typ
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
.