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MT2302
N-Channel Enhancement Effect Transistor
Mo de
Field
Product Summary
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (m¡) Typ
36@ VGS=4.5V
D
20V
3.6A
45@ VGS=2.5V
Features
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
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Notebook Computer Portable Battery Pack
G S
D S
G
ABSOLUTE MAXIMUM RATINGS˄TA=25ć unless otherwise noted˅
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous@Tj=125ć
Symbol
VDS VGS ID
Limit
Unit
20
V
±12
V
3.6
A
- Pulse d b
IDM
12
A
Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
1.25
A
1.
MT2302 Datasheet
