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MT2307 - P-Channel MOSFET

General Description

S OT 23-3L par ts ar e s hipped i n tape.

T he carrier tape is made from a d issipative (carbon filled) polycarbonate resin.

Key Features

  • ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement $.

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Datasheet Details

Part number MT2307
Manufacturer MT Semiconductor
File Size 566.97 KB
Description P-Channel MOSFET
Datasheet download datasheet MT2307 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT2307 3&KDQQHO(QKDQFHPHQW0R GH)LHOG (IIHFW7UDQVLVWRU Product Summary  PRODUCT SUMMARY VDSS ID RDS(ON) (m¡) Typ -20V -4.6A 70@ VGS=-4.5V 95@ VGS=-2.5V Features ‡ Super high dense cell design for low RDS(ON) ‡ Rugged and reliable ‡ Simple drive requirement $SSOLFDWLRQV ‡ LED Display Absolute Maximum Ratings(TA = 25 unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@Tj=125ć Symbol VDS VGS ID - Pulse d b IDM Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IS PD TJ,TSTG  D S G SOT-23 Limit -20 ±12 -4.6 -12 -1.25 1.