MT3256 Overview
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. Pulse width limited by maximum junction temperature.
MT3256 Key Features
- Max RDS(on)=10mΩ at VGS =10V,ID=25A
- Low gate charge(typical 43 nC)
- Low crss(typical 85pF)
- 100% avalanche tested
- Improved dv/dt capability