MT3256S Key Features
- Max RDS(on)=10mΩ at VGS =10V,ID=25A
- Low gate charge(typical 43 nC)
- Low crss(typical 85pF)
- 100% avalanche tested
- Improved dv/dt capability
- Part: MT3256S
- Manufacturer: MT Semiconductor
- Size: 3.75 MB
Related MT Semiconductor Datasheets
| Part Number | Description |
|---|---|
| MT3256 | 60V 50A N-Channel Power MOSFET |
| MT3250 | 50V 120A N-Channel Power MOSFET |
| MT3202 | 60V 65A N-Channel MOSFET |
| MT3203 | 30V 100A N-Channel MOSFET |
| MT3204 | 45V 176A N-Channel Power MOSFET |
MT3256S Description
These N-Channel enhancem ent m ode power field effect transistors ar e produced using Mos-tech’s proprietary, planar stripe, DMOS technology. Pulse width limited by maximum junction temperature.