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MT3400 - N-Channel Power MOSFET

General Description

on-state resistance and yet maintain superior switching performance.

Key Features

  • ‡ 4.0 A, 30 V. R DS(ON) = 0.025 :@ VGS = 10 V  R DS(ON) = 0.042 :@ VGS = 4.5 V ‡ Very fast switching speed. ‡ Low gate charge (5nC typical) ‡ High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability. Absolute Maximum Ratings(TA = 25 unless otherwise noted)  D G S D S G SOT-23-3L Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current.
  • Continuous (Note 1a) PD TJ, TST.

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Datasheet Details

Part number MT3400
Manufacturer MT Semiconductor
File Size 686.96 KB
Description N-Channel Power MOSFET
Datasheet download datasheet MT3400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT3400 1&KDQQHO3RZHU026)(7   General Description This N-Channel Logic Level MOSFET is produced using pMroosc-etsescht'shaSt ehmaiscobnedeunctoers’speacdivaallnycetadiloProewdetroTremcihnimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features ‡ 4.0 A, 30 V. R DS(ON) = 0.025 :@ VGS = 10 V  R DS(ON) = 0.042 :@ VGS = 4.5 V ‡ Very fast switching speed. ‡ Low gate charge (5nC typical) ‡ High performance version of industry standard SOT-23 package. Identical pin out to SOT-23 with 30% higher power handling capability.