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MT3402
N-Channel Enhancement Effect Transistor
Mo de
Field
Product Summary
PRODUCT SUMMARY
VDSS
ID
30V
2.5A
RDS(ON) (m¡) Typ 55 @ VGS=10V 80 @ VGS=4.5V
D
Features
G
Super high dense cell design for low RDS(ON)
S
Rugged and reliable
Simple drive requirement SOT-23 package
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Notebook Computer Portable Battery Pack
D
S G SOT-23
ABSOLUTE MAXIMUM RATINGS˄TA=25ć unless otherwise noted˅
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuous@Tj=125ć
- Pulse d b
Drain-source Diode Forward Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
Symbol
VDS VGS ID
IDM
IS PD
TJ,TSTG
Limit
30 12 2.5
10
1.25 1.