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MT4600 - Dual N & P-Channel PowerTrench MOSFET

General Description

These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.

Key Features

  • N-Channel 30V/5A, RDS (ON) = 28mΩ (max. ) @ VGS =4.5V RDS (ON) = 38mΩ (max. ) @ VGS =2.5V.
  • P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max. ) @ VGS =-4.5V RDS (ON) = 85mΩ (max. ) @ VGS = -2.5V General.

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Datasheet Details

Part number MT4600
Manufacturer MT Semiconductor
File Size 496.26 KB
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet download datasheet MT4600 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT4600 Dual N & P-Channel Po werTrench® MOSFET Features • N-Channel 30V/5A, RDS (ON) = 28mΩ (max.) @ VGS =4.5V RDS (ON) = 38mΩ (max.) @ VGS =2.5V • P-Channel -30V/-4.6A, RDS (ON) = 63mΩ (max.) @ VGS =-4.5V RDS (ON) = 85mΩ (max.) @ VGS = -2.5V General Description These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.