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MT4607 Datasheet PDF

MT Semiconductor MT4607

Dual N & P-Channel PowerTrench MOSFET

Part No. MT4607
Datasheet MT4607 Download
Manufacturer
MT Semiconductor
Description Dual N & P-Channel PowerTrench MOSFET
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MT4607 datasheet page 1 preview

FEATURES

GENERAL DESCRIPTION

These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. $SSOLFDWLRQV ‡ '& '& SULPDU\ EULGJH ‡ '& '& 6\QFKURQRXV UHFWLILFDWLRQ ‡ +RW VZDS ‡ )DQ GULYH

ABSOLUTE MAXIMUM RATINGS

TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous (Note 1a) - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) N-...
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