MT4607
Features
General Description
These dual N and P-Channel enhancement mode power field effect transistors are produced using MOS-TECH Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS VGSS ID PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
(Note 1a)
- Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case...
