MT4953A1 - P-Channel MOSFET

MT Semiconductor

Key Features

Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant.

MT4953A1 p-channel mosfet by MT Semiconductor - Datasheet Preview

Datasheet Details

Part number	MT4953A1
Manufacturer	MT Semiconductor
File Size	685.87 KB
Description	P-Channel MOSFET
Datasheet	MT4953A1 Datasheet

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Full PDF Text Transcription (Reference)

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MT4953A1 P-Channel Enhancement Mo de Field Effect Transistor Product Summary VDS= -20V ID= -4.5A RDS(ON) = 80m @VGS= -10V/-4.5A RDS(ON) = 95m @VGS= -4.5V/-3.6A Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. Applications ˖ Load Switch. PWM Applications. Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID IDM IS PD TJ, TSTG Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range Notes: 1. Surface Mounted on 1” x 1” FR4 Board, t 10 Sec.