MT6808D
Features
- Typ Ros （。n)=7.0mo at飞也 ＝10V,ID =20A
。
- High perfi rmance trench technology for extremely low Ros(on)
。1w
- High p er and current handing capability
。 General Descripti n
。 This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC c nverters using either synchronous or conventional switching PWM controlle阻. It has been optimized for low gate cha咱e,low Ros(ON) and fast switching speed.
。 Applicati ns
- DC-DC prima叩bridge
- DC-DC Synchronous 『- ectification
- Power Managemement for Inverter Systems
MT Semlconductore
。 http://.mtsemi.c m
Simplified Schematic D
G s MARKING DIAGRAM & PIN ASSIGNMENT
Absolute Maximum Ratings
Symbol
Parameter mon Ratings (TA=25°C Unless Othe「wise Noted)
Voss Drain-Source Voltage
VGss Gate-Source Voltage
T」 Maximum Junction Tempe「ature
Tsrn Storage Temperature Range
Diode Continuous Forward Current
。 。 M unted n Large Heat Sink lo M Pulsed Drain Current-
。 lo c ntim』ous Drain Cu『rent
Po Maximum Power...
