• Part: MT6809S
  • Description: P-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: MT Semiconductor
  • Size: 418.31 KB
Download MT6809S Datasheet PDF
MT Semiconductor
MT6809S
Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. ‡ Ro HS pliant. $SSOLFDWLRQV ‡ Power Switching Application ‡ Hard switched and high frequency circuit ‡ UPS ‡ Load Switch TO-252-2L Absolute Maximum Ratings (TA = 25 unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100ć) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID (100ć) IDM PD TJ,TSTG Limit -60 ±20 -80 -50 -2180 55 0.76 222 -55 To 150 Thermal Characteristic Thermal Resistance, Junction-to-Case(Note 2) RșJC Unit V V A A A W W/ć m J ć ć/W ZZZPWVHPLFRP Electrical Characteristics (TC=25ćunless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain...