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MT6809S - P-Channel MOSFET

Key Features

  • ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant. $.

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Datasheet Details

Part number MT6809S
Manufacturer MT Semiconductor
File Size 418.31 KB
Description P-Channel MOSFET
Datasheet download datasheet MT6809S Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 MT6809S 3&KDQQHO(QKDQF HPHQW0R GH)LHOG  (IIHFW7UDQVLVWRU Product Summary ‡ VDS = -60V  ‡ I D = -80A (VGS= -10V) ‡ RDS(ON) 11 m @VGS= -10V Features ‡ Advanced Trench Process Technology. ‡ High Density Cell Design for Ultra Low On-Resistance. ‡ Lead free product is acquired. ‡ RoHS Compliant.