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MMG100H120H6HN - IGBT

Key Features

  • IGBT CHIP(T4 Fast Trench+Field Stop technology).
  • High short circuit capability,self limiting short circuit current.
  • VCE(sat) with positive temperature coefficient.
  • Fast switching and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Low switching losses.
  • Temperature sense included.

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Datasheet Details

Part number MMG100H120H6HN
Manufacturer MacMic
File Size 1.41 MB
Description IGBT
Datasheet download datasheet MMG100H120H6HN Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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May 2015 PRODUCT FEATURES □ IGBT CHIP(T4 Fast Trench+Field Stop technology) □ High short circuit capability,self limiting short circuit current □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses □ Temperature sense included APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems MMG100H120H6HN Preliminary 1200V 100A Four-Pack Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃ ICM Repetitive Peak C