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MMG200B065PD6EN - IGBT

Key Features

  • 650V IGBT3 CHIP(Trench+Field Stop technology).
  • Low saturation voltage and positive temperature coefficient.
  • Low switching losses and short tail current.
  • Free wheeling diodes with fast and soft reverse recovery.
  • Temperature sense included.

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Datasheet Details

Part number MMG200B065PD6EN
Manufacturer MacMic
File Size 252.24 KB
Description IGBT
Datasheet download datasheet MMG200B065PD6EN Datasheet

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November 2017 MMG200B065PD6EN 650V 200A Three Level Inverter Module Version 01 RoHS Compliant PRODUCT FEATURES □ 650V IGBT3 CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Low switching losses and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Temperature sense included APPLICATIONS □ 3-Level-Applications □ Solar Applications □ UPS Systems IGBT(T1、T2、T3、T4) ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃,TJmax=175℃ TC=60℃,TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 6