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April 2020
PRODUCT FEATURES
□ IGBT chip in trench FS-technology □ Low switching losses □ VCE(sat) with positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery
MMG200D120B6UC
Version 01
1200V 200A IGBT Module RoHS Compliant
APPLICATIONS
□ Welding Machine □ Power Supplies □ Others
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃,TJmax=175℃ TC=95℃,TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃,TJmax=175℃
Values
Unit
1200 V
±20
291
200
A
400
1071
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS
MMG200D120B6UC Datasheet
