MMN550WB025B
MMN550WB025B is MOSFET manufactured by MacMic.
FEATURES
ƶ Proprietary New Trench Technology ƶ RDS(ON).typ=1.5mȍ@VGS=10V ƶ Low Gate Charge Minimize Switching Loss ƶ Fast Recovery Schottky Diode ƶ10K ȍ Gate Protected Resistance Inside ƶ Inside the module,each MOSFET chip has a gate resistance:10ȍ
APPLICATIONS
ƶ High efficiency DC/DC Converters ƶ ISG EV Products ƶ UPS inverter
Type MMN550WB025B
VDS 250V
ID 550A
RDS(ON).max TJ=25ć 1.75mȍ
TJmax 175ć
Marking MMN550WB025B
Package NWB
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VDSS Drain
- Source Voltage
TJ=25ć
VGSS Gate
- Source Voltage
ID Continuous Drain Current
TC=25ć, TJmax=175ć TC=80ć, TJmax=175ć
IDM Pulsed Drain Current at VGS=10V
Limited by TJmax
PD Maximum Power Dissipation
TC=25ć, TJmax=175ć
EAS Single Pulse Avalanche Energy
VDD=50V,L=1m H
Values 250 ±20 690 550 1100 2500 5000
THERMAL AND MODULE...
