MX25U4035 Datasheet | Macronix

MX25U4035 MX25U8035 MX25U4035/MX25U8035 DATASHEET P/N: PM1394 REV. 1.4, JUL. 23, 2010 1 MX25U4035 MX25U8035 Features 4M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH 8M-BIT [x 1/x 2/x 4] 1.8V CMOS SERIAL FLASH GENERAL - Serial Peripheral Interface patible -- Mode 0 and Mode 3 - 4M: 4,194,304 x 1 bit structure or 2,097,152 x 2 bits (two I/O read mode) structure or 1,048,576 x 4 bits (four I/ O read mode) structure 8M: 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O read mode) structure or 2,097,152 x 4 bits (four I/ O read mode) structure - Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each - Any Block can be erased individually - Single Power Supply Operation - 1.65 to 2.0 volt for read, erase, and program operations - Latch-up protected to 100m A from -1V to Vcc +1V PERFORMANCE - High Performance - Fast read - 1 I/O: 40MHz with 8 dummy cycles - 2 I/O: 40MHz with 4 dummy cycles, equivalent to 80MHz - 4 I/O: 33MHz with 6 dummy cycles, equivalent to 132MHz - Fast program time: 2ms(typ.) and 7ms(max.)/page (256-byte per page) - Byte program time: 30us (typical) - Continuously program mode (automatically increase address under word program mode) - Fast erase time: 90ms (typ.)/sector (4K-byte per sector); 0.8s(typ.) /block (32K-byte per block); 1.5s(typ.) /block (64K-byte per block); 7.5s(typ.) /chip for 4M; 15s(typ.) /chip for 8M - Low Power Consumption - Low active read current: 12m A(max.) at 40MHz, 6m A(max.) at 25MHz - Low active erase/programming current: 22m A (max.) - Low standby current: 5u A...