MX26L1620 Datasheet | Macronix

ADVANCED INFORMATION 16M-BIT [1M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM Features - 1,048,576 x 16 byte structure - Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations .. - Low Vcc write inhibit is equal to or less than 2.5V - patible with JEDEC standard - High Performance - Fast access time: 90/120ns (typ.) - Fast program time: 35s/chip (typ.) - Fast erase time: 45s/chip (typ.) - Low Power Consumption - Low active read current: 10m A (typ.) at 5MHz - Low standby current: 30u A (typ.) - Minimum 100 erase/program cycle - 10-year data retention - Status Reply - Data polling & Toggle bits provide detection of program and erase operation pletion 12V ACC input pin provides accelerated program capability Output voltages and input voltages on the device is determined by the voltage on the VI/O pin. - VI/O voltage range:1.65V~3.6V Package - 44-Pin SOP - 48-Pin TSOP - 48-Ball CSP - - - GENERAL DESCRIPTION The MX26L1620 is a 16M bit MTP EPROMTM organized as 1M bytes of 16 bits. MXIC's MTP EPROMTM offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26L1620 is packaged in 44-pin SOP, 48-pin TSOP and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX26L1620 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26L1620 has separate chip enable (CE) and output enable OE controls. MXIC's MTP EPROMTM augment EPROM functionality with in-circuit electrical erasure and programming. The MX26L1620 uses a mand register to manage this functionality. MXIC's MTP EPROMTM technology reliably stores memory contents even after 100 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the bination of advanced tunnel oxide processing and low internal electric...