MX26L6420 Datasheet | Macronix

ADVANCED INFORMATION 64M-BIT [4M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM Features - 4,194,304 x 16 byte structure - Single Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - Low Vcc write inhibit is equal to or less than 2.5V .. - patible with JEDEC standard - High Performance - Fast access time: 90/120ns (typ.) - Fast program time: 140s/chip (typ.) - Fast erase time: 150s/chip (typ.) - Low Power Consumption - Low active read current: 17m A (typ.) at 5MHz - Low standby current: 30u A (typ.) - Minimum 100 erase/program cycle - Status Reply - Data polling & Toggle bits provide detection of program and erase operation pletion 12V ACC input pin provides accelerated program capability Output voltages and input voltages on the device is deterined by the voltage on the VI/O pin. - VI/O voltage range:1.65V~3.6V 10 years data retention Package - 44-Pin SOP - 48-Pin TSOP - 48-Ball CSP - 63-Ball CSP - - - - GENERAL DESCRIPTION The MX26L6420 is a 64M bit MTP EPROMTM organized as 4M bytes of 16 bits. MXIC's MTP EPROMTM offer the most cost-effective and reliable read/write non-volatile random access memory. The MX26L6420 is packaged in 44SOP, 48-pin TSOP, 48-ball CSP and 63-ball CSP. It is designed to be reprogrammed and erased in system or in standard EPROM programmers. The standard MX26L6420 offers access time as fast as 90ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX26L6420 has separate chip enable (CE) and output enable OE controls. MXIC's MTP EPROMTM augment EPROM functionality with in-circuit electrical erasure and programming. The MX26L6420 uses a mand register to manage this functionality. MXIC's MTP EPROMTM technology reliably stores memory contents even after 100 erase and program cycles. The MXIC cell is designed to optimize the erase and program mechanisms. In addition, the bination of advanced tunnel oxide processing and low...