MX28F2000T Datasheet | Macronix

FEATURES - 262,144 bytes by 8-bit organization - Fast access time: 90/120 ns - Low power consumption - 50m A maximum active current - 100u A maximum standby current - Programming and erasing voltage 12V ± 5% - mand register architecture - Byte Programming (15us typical) - Auto chip erase 5 seconds typical (including preprogramming time) - Block Erase - Optimized high density blocked architecture - Eight 4-KB blocks - Fourteen 16-KB blocks - Auto Erase (chip & block) and Auto Program - DATA polling - Toggle bit - 10,000 minimum erase/program cycles - Latch-up protected to 100m A from -1 to VCC+1V - Advanced CMOS Flash memory technology - patible with JEDEC-standard byte-wide 32-pin EPROM pinouts - Package type: - 32-pin plastic DIP - 32-pin PLCC GENERAL DESCRIPTION The MX28F2000T is a 2-mega bit Flash memory organized as 256K bytes of 8 bits each. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX28F2000T is packaged in 32-pin PDIP and PLCC . It is designed to be reprogrammed and erased insystem or in-standard EPROM programmers. The standard MX28F2000T offers access times as fast as 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2000T has separate chip enable (CE) and output enable (OE) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2000T uses a mand register to manage this functionality, while maintaining a standard 32-pin pinout. The mand register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM patibility. MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the bination of advanced tunnel oxide processing and low internal electric fields for...