MX28F2100B Datasheet | Macronix

FEATURES - 262,144x8/131,072x16 switchable - Fast access time: 70/90/120ns - Low power consumption - 50m A maximum active current - 100u A maximum standby current - Programming and erasing voltage 12V ± 7% - mand register architecture - Byte/Word Programming (50 us typical) - Auto chip erase 5 sec typical (including preprogramming time) - Block Erase (Any one from 5 blocks:16K-Byte x1, 8K-Byte x2, 96K-Byte x1, and 128K-Byte x1) - Auto Erase with Erase Suspend capability - Status Register feature for Device status detection - Auto Erase (chip & block) and Auto Program - Status Registers - 10,000 minimum erase/program cycles - Latch-up protected to 100m A from -1 to VCC+1V - Package type: - 44-pin SOP - 48-pin TSOP (Type 1) GENERAL DESCRIPTION The MX28F2100B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits or 128K words of 16 bits switchable. MXIC's Flash memories offer the most cost-effective and reliable read/write nonvolatile random access memory. The MX28F2100B is packaged in 44-pin SOP and 48-pin TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers. The standard MX28F2100B offers access times as fast as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX28F2100B has separate chip enable (CE) and output enable (OE ) controls. MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX28F2100B uses a mand register to manage this functionality. The mand register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM patibility. MXIC Flash technology reliably stores memory contents even after 10,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the bination of advanced tunnel oxide processing and low internal electric fields for erase and programming...