Datasheet Summary
INDEX PRELIMINARY
16M-BIT [2M x 8/1M x 16] CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM
Features
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- - 5V ± 5% write, erase and read JEDEC-standard EEPROM mands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2
- Sector erase architecture
- 16 equal sectors of 128k bytes each
- Sector erase time: 150ms typical
- Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the whole chip with Erase Suspend capability
- Automatically programs and verifies data at specified addresses
- Status Register feature for detection of program or erase...