MX29F1611
Overview
The MX29F1611 is a 16-mega bit Pagemode Flash memory organized as either 1M wordx16 or 2M bytex8. The MX29F1611 includes 16-128KB(131,072 Bytes) blocks or 16-64KW(65,536 Words)blocks.
- 5V ± 5% write, erase and read JEDEC-standard EEPROM commands Endurance: 10,000 cycles Fast access time: 100/120/150ns Fast pagemode access time: 50/60/70ns Page access depth: 16 bytes/8 words, page address A0, A1, A2
- Sector erase architecture - 16 equal sectors of 128k bytes each - Sector erase time: 150ms typical
- Auto Erase and Auto Program Algorithms - Automatically erases any one of the sectors or the whole chip with Erase Suspend capability - Automatically programs and verifies data at specified addresses
- Status Register feature for detection of program or erase cycle completion
- Low VCC write inhibit is equal to or less than 3.2V
- Software and hardware data protection
- Page program operation - Internal address and data latches for 128 bytes/64 words per page - Page programming time: 5ms typical - Byte programming time: 39us in average
- Low power dissipation - 80mA active current - 100uA standby current
- CMOS inputs and outputs
- Two independently Protected sectors
