Datasheet Summary
PRELIMINARY
16M-BIT [2M x8/1M x16] CMOS SINGLE VOLTAGE FLASH EEPROM Features
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- 5V ± 10% write and erase JEDEC-standard EEPROM mands Endurance:100 cycles Fast access time: 90/100/120ns Auto Erase and Auto Program Algorithms
- Automatically erases the whole chip
- Automatically programs and verifies data at specified addresses Status Register feature for detection of program or erase cycle pletion Low VCC write inhibit is equal to or less than 3.2V
- Software and hardware data protection
- Page program operation
- Internal address and data latches for 64 words per page
- Page programming time: 0.9ms typical Low power dissipation
- 30mA typical active current
- 1uA...