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MX29F800B - 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY

Download the MX29F800B datasheet PDF. This datasheet also covers the MX29F800T variant, as both devices belong to the same 8m-bit [1mx8/512kx16] cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

General Description

The MX29F800T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits.

MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.

The MX29F800T/B is packaged in 44-pin SOP, 48-pin TSOP.

Key Features

  • 1,048,576 x 8/524,288 x 16 switchable.
  • Single power supply operation - 5.0V only operation for read, erase and program operation.
  • Fast access time: 70/90/120ns.
  • Low power consumption - 50mA maximum active current - 0.2uA typical standby current.
  • Command register architecture - Byte/word Programming (7us/12us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15).
  • Auto Erase (chip & sector) and Auto Pro.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MX29F800T_MacronixInternational.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MX29F800B
Manufacturer Macronix
File Size 693.89 KB
Description 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
Datasheet download datasheet MX29F800B Datasheet

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Other Datasheets by Macronix

Part Number Description
MX29F800T 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
MX29F8100 8M-BIT [1M x 8/512K x 16] CMOS SINGLE VOLTAGE FLASH MEMORY
MX29F040 4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040C 4M-BIT [512K x 8] SINGLE VOLTAGE 5V ONLY FLASH MEMORY
MX29F100B 1M-BIT [128Kx8/64Kx16] CMOS FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption - 50mA maximum active current - 0.2uA typical standby current • Command register architecture - Byte/word Programming (7us/12us typical) - Sector Erase (Sector structure 16K-Bytex1, 8K-Bytex2, 32K-Bytex1, and 64K-Byte x15) • Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors with Erase Suspend capability.