MX29F002N Description
MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY.
MX29F002N Key Features
- 262,144x 8 only
- Fast access time: 55/70/90/120ns
- Low power consumption
- 30mA maximum active current(5MHz)
- 1uA typical standby current
- Programming and erasing voltage 5V ± 10%
- mand register architecture
- Byte Programming (7us typical)
- Auto Erase (chip & sector) and Auto Program
- Automatically erase any bination of sectors or the whole chip with Erase Suspend capability