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MX29F022/022N
2M-BIT[256K x 8]CMOS FLASH MEMORY
FEATURES
• 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption
-30mA maximum active current -1uA typical standby current@5MHz Programming and erasing voltage 5V±10% Command register architecture -Byte Programming (7us typical) -Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3) Auto Erase (chip & sector) and Auto Program -Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. -Automatically programs and verifies data atspecified address Erase Suspend/Erase Resume -Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.