Datasheet Summary
MMP60R190P Datasheet
MMP60R190P
600V 0.19Ω N-channel MOSFET
- Description
MMP60R190P is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
- Package & Internal Circuit
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.19
3 20 51
- Features
Unit V Ω V A nC
- Low Power Loss by High Speed Switching and Low On-Resistance
- 100% Avalanche Tested
- Green Package
- Pb Free Plating, Halogen...
