Datasheet Summary
MMSF60R580Q Datasheet
MMSF60R580Q
600V 0.58Ω N-channel MOSFET
- Description
MMSF(A)60R580Q is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
- Key Parameters
Parameter VDS @ Tj,max RDS(on),max
VTH,typ ID
Qg,typ
Value 650 0.58
3 8 13
Unit V Ω V A nC
- Package & Internal Circuit D
- Features
- Low Power Loss by High Speed Switching and Low On-Resistance
- 100% Avalanche Tested
- Green Package
- Pb Free Plating,...